화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 Characterization of P-channel power trench MOSFETs with polycrystalline silicon germanium gate electrode for faster switching
Dikshit R, Daggubati M
Solid-State Electronics, 68, 4, 2012
2 Deposition of polycrystalline SiGe by surface wave excited plasma
Takanishi Y, Okayasu I, Toyoda H, Sugai H
Thin Solid Films, 516(11), 3554, 2008
3 Characterizations of polycrystalline SiGe films on SiO(2) grown by gas-source molecular beam deposition
Mitsui M, Tamoto M, Arimoto K, Yamanaka J, Nakagawa K, Sato T, Usami N, Sawano K, Shiraki Y
Thin Solid Films, 517(1), 254, 2008
4 Structural characterisation of polycrystalline SiGe thin film
Teh LK, Choi WK, Bera LK, Chim WK
Solid-State Electronics, 45(11), 1963, 2001