| 1 |
Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell
Yoon S, Lee SH, Shin JC, Kim JS, Lee SJ, Leem JY, Krishna S
Current Applied Physics, 18(6), 667, 2018 |
| 2 |
Photoreflectance study on the photovoltaic effect in InAs/GaAs quantum dot solar cell
Yoon S, Lee SH, Shin JC, Kim JS, Lee SJ, Leem JY, Krishna S
Current Applied Physics, 18(6), 667, 2018 |
| 3 |
Photoreflectance studies of optical transitions in GaNPAs intermediate band solar cell absorbers
Zelazna K, Kudrawiec R, Luce A, Yu KM, Kuang YJ, Tu CW, Walukiewicz W
Solar Energy Materials and Solar Cells, 188, 99, 2018 |
| 4 |
Investigation of hydrogen inductively coupled plasma treatment effect for Ge0.938Sn0.062/Ge/Si film using photoreflectance spectroscopy
Jo HJ, Kim JS, Ryu MY, Yeo YK, Kouvetakis J
Thin Solid Films, 645, 345, 2018 |
| 5 |
Temperature behavior of Franz-Keldysh oscillation and evaluation of interface electric fields attributed to strain effect of InAs/GaAs quantum dot
Kim JS
Current Applied Physics, 17(1), 31, 2017 |
| 6 |
Effect of growth conditions on the Al composition and optical properties of AlxGa1-xN layers grown by atmospheric-pressure metal organic vapor phase epitaxy
Soltani S, Bouzidi M, Chine Z, Toure A, Halidou I, El Jani B, Shakfa MK
Thin Solid Films, 630, 2, 2017 |
| 7 |
Thickness-dependent thermal properties of amorphous insulating thin films measured by photoreflectance microscopy
Al Mohtar A, Tessier G, Ritasalo R, Matvejeff M, Stormonth-Darling J, Dobson PS, Chapuis PO, Gomes S, Roger JP
Thin Solid Films, 642, 157, 2017 |
| 8 |
Defect engineering in semiconducting oxides: Control of ZnO surface potential via temperature and oxygen pressure
Li M, Seebauer EG
AIChE Journal, 62(2), 500, 2016 |
| 9 |
Observation of temperature-dependent heavy- and light-hole split direct bandgap and tensile strain from Ge0.985Sn0.015 using photoreflectance spectroscopy
Jo HJ, Kim GH, Kim JS, Ryu MY, Yeo YK, Harris TR, Kouvetakis J
Current Applied Physics, 16(1), 83, 2016 |
| 10 |
Temperature-dependent direct transition energy in Ge0.99Sn0.01 film grown on Si measured by photoreflectance spectroscopy
Jo HJ, So MG, Kim JS, Ryu MY, Yeo YK, Kouvetakis J
Thin Solid Films, 591, 295, 2015 |
