| 1 |
P-doped TiO2 with superior visible-light activity prepared by rapid microwave hydrothermal method
Niu JF, Lu P, Kang M, Deng KF, Yao BH, Yu XJ, Zhang Q
Applied Surface Science, 319, 99, 2014 |
| 2 |
Effect of Si/Fe ratio on the boron and phosphorus doping efficiency of beta-FeSi2 by magnetron sputtering
Xu JX, Yao RH
Thin Solid Films, 520(1), 515, 2011 |
| 3 |
Effects of high-concentration phosphorus doping on crystal quality and lattice strain in SiGeHBTs
Oda K, Miura M, Shimamoto H, Washio K
Applied Surface Science, 254(19), 6017, 2008 |
| 4 |
Precise control of doping profile and crystal quality improvement of SiGe HBTs using continuous epitaxial growth technology
Oda K, Miura M, Shimamoto H, Washio K
Thin Solid Films, 517(1), 98, 2008 |
| 5 |
Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe
Makihara K, Xu J, Ikeda M, Murakami H, Higashi S, Miyazaki S
Thin Solid Films, 508(1-2), 186, 2006 |
| 6 |
Preparation of phosphorous dope beta-irondisilicide thin films and application for devices
Ehara T, Nakagomi S, Kokubun Y
Solid-State Electronics, 47(2), 353, 2003 |
| 7 |
Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD
Fonrodona M, Gordijn A, van Veen MK, van der Werf CHM, Bertomeu J, Andreu J, Schropp REI
Thin Solid Films, 430(1-2), 145, 2003 |
