| 1 |
Low surface recombination velocity in n-Si passivated by catalytic-chemical vapor deposited alumina films
Ogita YI, Aizawa Y
Thin Solid Films, 575, 52, 2015 |
| 2 |
Ultralow surface recombination in p-Si passivated by catalytic-chemical vapor deposited alumina films
Ogita YI, Tachihara M, Aizawa Y, Saito N
Thin Solid Films, 519(14), 4469, 2011 |
| 3 |
Investigating the solid electrolyte interphase using binder-free graphite electrodes
Kang SH, Abraham DP, Xiao A, Lucht BL
Journal of Power Sources, 175(1), 526, 2008 |
| 4 |
Characteristics of Ga2O3(Gd2O3)/GaAs interface: Structures and compositions
Hong M, Kortan AR, Kwo J, Mannaerts JP, Krajewski JJ, Lu ZH, Hsieh KC, Cheng KY
Journal of Vacuum Science & Technology B, 18(3), 1688, 2000 |
| 5 |
Comparison of high-temperature electrical characterizations of pulsed-laser deposited AlN on 6H- and 4H-SiC from 25 to 450 degrees C
Lelis AJ, Scozzie CJ, McLean FB, Geil BR, Vispute RD, Venkatesan T
Materials Science Forum, 338-3, 1137, 2000 |
| 6 |
Formation of Al2O3-Ta2O5 double-oxide thin films by low-pressure MOCVD and evaluation of their corrosion resistances in acid and alkali solutions
Hara N, Nagata S, Akao N, Sugimoto K
Journal of the Electrochemical Society, 146(2), 510, 1999 |
| 7 |
Viscous-Flow and MOS Properties of MgF2-B2O3-Geo2-SiO2 Glasses with Ionic Bonds
Kobayashi K
Journal of Applied Electrochemistry, 26(5), 551, 1996 |
