검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Transition from partial to full depletion in advanced SOI MOSFETs: Impact of channel length and temperature Zaouia S, Cristoloveanu S, Sureddin M, Goktepeli S, Perera AH Solid-State Electronics, 51(2), 252, 2007 |
| 2 |
Suppression of short channel effects by full inversion in deep sub-micron gate SOI MOSFETs Hanajiri T, Toyabe T, Sugano T Solid-State Electronics, 45(12), 2077, 2001 |