| 1 |
Investigation of nonlinear distortion in double heterojunction GaAs based pHEMT subject to frequency and temperature
Alim MA, Ali MM, Rezazadeh AA
Solid-State Electronics, 146, 44, 2018 |
| 2 |
The influence of impurity profiles on mobility of two-dimensional electron gas in AlGaAs/InGaAs/GaAs heterostructures modulation-doped by donors and acceptors
Protasov DY, Zhuravlev KS
Solid-State Electronics, 129, 66, 2017 |
| 3 |
An enhancement-mode pseudomorphic high electron mobility transistor prepared by an Electroless Plating (EP) and a gate-sinking approaches
Chen CC, Chen HI, Liu IP, Chou PC, Liou JK, Tsai JH, Liu WC
Solid-State Electronics, 105, 45, 2015 |
| 4 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
Mun JK, Oh JH, Sung HK, Wang C
Solid-State Electronics, 114, 121, 2015 |
| 5 |
Cryogenic noise performance of InGaAs/InAlAs HEMTs grown on InP and GaAs substrate
Schleeh J, Rodilla H, Wadefalk N, Nilsson PA, Grahn J
Solid-State Electronics, 91, 74, 2014 |
| 6 |
Integration techniques of pHEMTs and planar Gunn diodes on GaAs substrates
Papageorgiou V, Khalid A, Li C, Steer MJ, Cumming DRS
Solid-State Electronics, 102, 87, 2014 |
| 7 |
InGaP/InGaAs MOS-PHEMT with a nanoscale liquid phase-oxidized InGaP dielectric
Lin HC, Lee FM, Cheng YC, Lee KW, Adriyanto F, Wang YH
Solid-State Electronics, 68, 27, 2012 |
| 8 |
On the characteristics of an electroless plated (EP)-based pseudomorphic high electron mobility. transistor (PHEMT)
Huang CC, Chen HI, Cheng SY, Chen LY, Tsai TH, Liu YC, Chen TY, Hsu CH, Liu WC
Solid-State Electronics, 61(1), 13, 2011 |
| 9 |
A low insertion loss GaAs pHEMT switch utilizing dual n(+)-doping AlAs etching stop layers design
Chien FT, Lin DW, Yang CW, Fu JS, Chiu HC
Solid-State Electronics, 54(3), 231, 2010 |
| 10 |
A modified Angelov model for InGaP/InGaAs enhancement and depletion-mode pHEMTs using symbolic defined device technology
Cheng CS, Shih YJ, Chiu HC
Solid-State Electronics, 50(2), 254, 2006 |
