화학공학소재연구정보센터
검색결과 : 7건
No. Article
1 Precipitation recovery of boron from aqueous solution by chemical oxo-precipitation at room temperature
Lin JY, Shih YJ, Chen PY, Huang YH
Applied Energy, 164, 1052, 2016
2 Thermal History Index as a bulk quality indicator for Czochralski solar wafers
Veirman J, Martel B, Letty E, Peyronnet R, Raymond G, Cascant M, Enjalbert N, Danel A, Desrues T, Dubois S, Picoulet C, Brun X, Bonnard P
Solar Energy Materials and Solar Cells, 158, 55, 2016
3 Hydrogen passivation of defect-rich n-type Czochralski silicon and oxygen precipitates
Hallam B, Chan C, Abbott M, Wenham S
Solar Energy Materials and Solar Cells, 141, 125, 2015
4 Immobilization of dislocations by oxygen precipitates in Czochralski silicon: Feasibility of precipitation strengthening mechanism
Zeng ZD, Chen JH, Zeng YH, Ma XG, Yang DR
Journal of Crystal Growth, 324(1), 93, 2011
5 Enhancement of minority-carrier lifetime by an advanced high temperature annealing method
Pan H, Tong LY, Feng YP, Lin JY
Thin Solid Films, 504(1-2), 129, 2006
6 Change in shape of oxygen precipitate grown by thermal annealing
Sakai K, Yamagami T, Ojima K
Journal of Crystal Growth, 210(1-3), 65, 2000
7 Formation of precipitates in 6H-SiC after oxygen implantation and subsequent annealing
Pecz B, Klettke O, Pensl G, Stoemenos J
Materials Science Forum, 338-3, 961, 2000