화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Assisted passivation by a chemically grown SiO2 layer for p-type selective emitter-passivated emitter and rear cells
Joonwichien S, Kida Y, Moriya M, Utsunomiya S, Shirasawa K, Takato H
Solar Energy Materials and Solar Cells, 186, 84, 2018
2 Densification of similar to 5 nm-thick SiO2 layers by nitric acid oxidation
Choi J, Joo S, Park TJ, Kim WB
Applied Surface Science, 413, 92, 2017
3 Quantitative measurement of O/Si ratios in oxygen- sputtered silicon using O-18 implant standards
Sobers RC, Franzreb K, Williams P
Applied Surface Science, 231-2, 729, 2004
4 Feasibility of an isolation by local oxidation of silicon without field implant
Fay JL, Beluch J, Despax B, Sarrabayrouse G
Solid-State Electronics, 45(8), 1257, 2001
5 Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction
Toda A, Ikarashi N, Ono H
Journal of Crystal Growth, 210(1-3), 341, 2000