검색결과 : 5건
No. | Article |
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1 |
Assisted passivation by a chemically grown SiO2 layer for p-type selective emitter-passivated emitter and rear cells Joonwichien S, Kida Y, Moriya M, Utsunomiya S, Shirasawa K, Takato H Solar Energy Materials and Solar Cells, 186, 84, 2018 |
2 |
Densification of similar to 5 nm-thick SiO2 layers by nitric acid oxidation Choi J, Joo S, Park TJ, Kim WB Applied Surface Science, 413, 92, 2017 |
3 |
Quantitative measurement of O/Si ratios in oxygen- sputtered silicon using O-18 implant standards Sobers RC, Franzreb K, Williams P Applied Surface Science, 231-2, 729, 2004 |
4 |
Feasibility of an isolation by local oxidation of silicon without field implant Fay JL, Beluch J, Despax B, Sarrabayrouse G Solid-State Electronics, 45(8), 1257, 2001 |
5 |
Local lattice strain measurements in semiconductor devices by using convergent-beam electron diffraction Toda A, Ikarashi N, Ono H Journal of Crystal Growth, 210(1-3), 341, 2000 |