| 1 |
Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
Akchurin RK, Berliner LB, Marmalyuk AA
Thin Solid Films, 518(8), 2105, 2010 |
| 2 |
TiO2 anatase thin films deposited by spray pyrolysis of an aerosol of titanium diisopropoxide
Conde-Gallardo A, Guerreri M, Castillo N, Soto AB, Fragoso R, Cabanas-Moreno JG
Thin Solid Films, 473(1), 68, 2005 |
| 3 |
Epitaxial growth of ruthenium dioxide films by chemical vapor deposition and its comparison with similarly grown chromium dioxide films
Miao GX, Gupta A, Xiao G, Anguelouch A
Thin Solid Films, 478(1-2), 159, 2005 |
| 4 |
Metallo-organic low-pressure chemical vapor deposition of Ta2O5 using TaC12H30O5N as precursor for batch fabrication of microsystems
Briand D, Mondin G, Jenny S, van der Wal PD, Jeanneret S, de Rooij NF, Banakh O, Keppner H
Thin Solid Films, 493(1-2), 6, 2005 |
| 5 |
Chemical vapor deposited RuOx films: annealing effects
Ganesan PG, Shpilman Z, Eizenberg M
Thin Solid Films, 425(1-2), 163, 2003 |
| 6 |
Using tetrakis-diethylamido-hafnium for HfO2 thin-film growth in low-pressure chemical vapor deposition
Ohshita Y, Ogura A, Hoshino A, Hiiro S, Suzuki T, Machida H
Thin Solid Films, 406(1-2), 215, 2002 |
| 7 |
Effect of the growth temperature on ZnO thin films grown by plasma enhanced chemical vapor deposition
Li BS, Liu YC, Zhi ZZ, Shen DZ, Lu YM, Zhang JY, Kong XG, Fan XW
Thin Solid Films, 414(2), 170, 2002 |
| 8 |
Group III impurity doped ZnO films prepared by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and oxygen
Haga K, Wijesena PS, Watanabe H
Applied Surface Science, 169, 504, 2001 |
| 9 |
Titanium-aluminum nitride film growth and related chemistry using dimethylamino-based precursors
Endle JP, Sun YM, Silverman J, Nguyen N, Cowley AH, White JM, Ekerdt JG
Thin Solid Films, 385(1-2), 66, 2001 |
| 10 |
Spontaneous and stimulated emission in ZnCdTe-ZnTe quantum wells grown by LP-MOCVD
Shan CX, Fan XW, Zhang JY, Zhang ZZ, Lu YM, Liu YC, Shen DZ
Thin Solid Films, 401(1-2), 225, 2001 |
