| 1 |
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors - Physical interpretation of transport phenomena
Nafaa B, Cretu B, Ismail N, Touayar O, Carin R, Simoen E, Veloso A
Solid-State Electronics, 150, 1, 2018 |
| 2 |
Low-frequency noise behavior of junctionless transistors compared to inversion-mode transistors
Jeon DY, Park SJ, Mouis M, Barraud S, Kim GT, Ghibaudo G
Solid-State Electronics, 81, 101, 2013 |
| 3 |
Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-kappa gate dielectric
Pandit S, Sarkar CK
Solid-State Electronics, 85, 54, 2013 |
| 4 |
Analytical modeling of flicker and thermal noise in n-channel DG FinFETs
Pandit S, Syamal B, Sarkar CK
Solid-State Electronics, 63(1), 177, 2011 |
| 5 |
Low-frequency noise assessment of the silicon passivation of Ge pMOSFETs
Simoen E, Firrincieli A, Leys F, Loo R, De Jaeger B, Mitard J, Claeys C
Thin Solid Films, 518(9), 2493, 2010 |
| 6 |
Low-frequency noise in buried-channel SiGe n-MODFETs
Madan A, Cressler JD, Koester SJ
Solid-State Electronics, 53(8), 901, 2009 |
| 7 |
The low-frequency noise behaviour of graded-channel SOI nMOSFETs
Simoen E, Claeys C, Chung TM, Flandre D, Pavanello MA, Martino JA, Raskin JP
Solid-State Electronics, 51(2), 260, 2007 |
| 8 |
Shrinking from 0.25 down to 0.12 mu m SOICMOS technology node: a contribution to low-frequency noise in partially depleted N-MOSFETs
Dieudonne F, Haendler S, Jomaah J, Balestra F
Solid-State Electronics, 47(7), 1213, 2003 |
