검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
N-2 as carrier gas: an alternative to H-2 for enhanced epitaxy of Si, SiGe and SiGe : C Meunier-Beillard P, Caymax M, Van Nieuwenhuysen K, Doumen G, Brijs B, Hopstaken M, Geenen L, Vandervorst W Applied Surface Science, 224(1-4), 31, 2004 |
| 2 |
Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H-2 and N-2 carrier gas Schroeter-Janssen H, Roehle H, Franke D, Bochnia R, Harde P, Grote N Journal of Crystal Growth, 221, 70, 2000 |