검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Influence of oxidation temperature on the interfacial properties of n-type 4H-SiC MOS capacitors Jia YF, Lv HL, Song QW, Tang XY, Xiao L, Wang LY, Tang GM, Zhang YM, Zhang YM Applied Surface Science, 397, 175, 2017 |
| 2 |
The search for near interface oxide traps - First-principles calculations on intrinsic SiO2 defects Knaup JM, Deak P, Gali A, Hajnal Z, Frauenheim T, Choyke JW Materials Science Forum, 483, 569, 2005 |
| 3 |
Electrically active traps at the 4H-SiC/SiO2 interface responsible for the limitation of the channel mobility Bassler M, Afanas'ev VV, Pensl G, Schulz M Materials Science Forum, 338-3, 1065, 2000 |
| 4 |
MOSFET performance of 4H-, 6H-, and 15R-SiC processed by dry and wet oxidation Yano H, Kimoto T, Matsunami H, Bassler M, Pensl G Materials Science Forum, 338-3, 1109, 2000 |