1 |
Light trapping of crystalline Si solar cells by use of nanocrystalline Si layer plus pyramidal texture Imamura K, Nonaka T, Onitsuka Y, Irishika D, Kobayashi H Applied Surface Science, 395, 50, 2017 |
2 |
Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions Shaban M, Bayoumi AM, Farouk D, Saleh MB, Yoshitake T Solid-State Electronics, 123, 111, 2016 |
3 |
Ultra low reflectivity surfaces by formation of nanocrystalline Si layer for crystalline Si solar cells Irishika D, Imamura K, Kobayashi H Solar Energy Materials and Solar Cells, 141, 1, 2015 |
4 |
Interface state-related linear and nonlinear optical properties of nanocrystalline Si/SiO2 multilayers Zhang P, Zhang XW, Lu P, Xu J, Xu X, Li W, Chen KJ Applied Surface Science, 292, 262, 2014 |
5 |
Hot-wire chemical vapor deposition and characterization of p-type nanocrystalline Si films for thin film photovoltaic applications Mao HY, Lo SY, Wuu DS, Wu BR, Ou SL, Hsieh HY, Horng RH Thin Solid Films, 520(16), 5200, 2012 |
6 |
Effect of substrate temperature on the nanostructural and chemical features of nc-Si:H thin films prepared by PECVD Son JI, Shim JH, Cho NH Current Applied Physics, 10(3), S365, 2010 |
7 |
The silicon-silicon oxide multilayers utilization as intrinsic layer on pin solar cells Colder H, Marie P, Gourbilleau F Thin Solid Films, 516(20), 6930, 2008 |
8 |
Hydrogenation of nanocrystalline Si thin film transistors employing inductively coupled plasma chemical vapor deposition for flexible electronics Han SM, Park JH, Park SG, Kim SJ, Han MK Thin Solid Films, 515(19), 7442, 2007 |
9 |
Enhanced green to red photoluminescence in thermally annealed of amorphous-Si : H/SiO2 multilayers Ma ZY, Han PG, Huang XF, Sui YP, Chen S, Qian B, Li W, Xu J, Xu L, Chen KJ, Feng D Thin Solid Films, 515(4), 2322, 2006 |
10 |
Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization Zou HC, Wu LC, Huang XF, Qiao F, Han PG, Zhou XH, Ma ZY, Liu YS, Li W, Chen KJ Thin Solid Films, 491(1-2), 212, 2005 |