| 1 |
Preparation of TiO2/NiO composite particles and their applications in dye-sensitized solar cells
Chou CS, Lin YJ, Yang RY, Liu KH
Advanced Powder Technology, 22(1), 31, 2011 |
| 2 |
Analytic resolution of Poisson-Boltzmann equation in nanometric semiconductor junctions
Murray H
Solid-State Electronics, 53(1), 107, 2009 |
| 3 |
Fabrication of n-p junction electrodes made of n-type SnO2 and p-type NiO for control of charge recombination in dye sensitized solar cells
Bandara J, Divarathne CM, Nanayakkara SD
Solar Energy Materials and Solar Cells, 81(4), 429, 2004 |
| 4 |
Direct determination of p/n junction depth by the emission of matrix complex ions
Alexandrov OV, Kazantsev DY, Kovarsky AP
Applied Surface Science, 203, 520, 2003 |
| 5 |
n-p junction formation in p-type silicon by hydrogen ion implantation
Barakel D, Ulyashin A, Perichaud I, Martinuzzi S
Solar Energy Materials and Solar Cells, 72(1-4), 285, 2002 |
| 6 |
Reduction of infrared response of CdS/CdTe thin-film solar cell with decreased thickness of photovoltaic active layer
Toyama T, Suzuki T, Gotoh M, Nakamura K, Okamoto H
Solar Energy Materials and Solar Cells, 67(1-4), 41, 2001 |
| 7 |
Noise as a diagnostic tool for semiconductor material and device characterization
Claeys C, Simoen E
Journal of the Electrochemical Society, 145(6), 2058, 1998 |
