검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Growth of 4H-SiC epilayers with low surface roughness and morphological defects density on 4 degrees off-axis substrates Dong L, Sun GS, Yu J, Zheng L, Liu XF, Zhang F, Yan GG, Li XG, Wang ZG Applied Surface Science, 270, 301, 2013 |
| 2 |
Growth of silicon carbide: process-related defects Yakimova R, Syvajarvi M, Iakimov T, Jacobsson H, Kakanakova-Georgieva A, Raback P, Janzen E Applied Surface Science, 184(1-4), 27, 2001 |