| 1 |
Low-frequency noise measurements at liquid helium temperature operation in ultra-thin buried oxide transistors - Physical interpretation of transport phenomena
Nafaa B, Cretu B, Ismail N, Touayar O, Carin R, Simoen E, Veloso A
Solid-State Electronics, 150, 1, 2018 |
| 2 |
Analytical modeling of flicker noise in DG-FinFETs with multi-layered nitrided high-kappa gate dielectric
Pandit S, Sarkar CK
Solid-State Electronics, 85, 54, 2013 |
| 3 |
Analytical modeling of flicker and thermal noise in n-channel DG FinFETs
Pandit S, Syamal B, Sarkar CK
Solid-State Electronics, 63(1), 177, 2011 |
| 4 |
The low-frequency noise behaviour of graded-channel SOI nMOSFETs
Simoen E, Claeys C, Chung TM, Flandre D, Pavanello MA, Martino JA, Raskin JP
Solid-State Electronics, 51(2), 260, 2007 |
| 5 |
Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics
von Haartman M, Westlinder J, Wu D, Malm BG, Hellstrom PE, Olsson J, Ostling M
Solid-State Electronics, 49(6), 907, 2005 |
| 6 |
Rotational-Dynamics of Naphthalene-Labeled Cross-Link Junctions in Poly(Dimethylsiloxane) Elastomers
Leezenberg PB, Marcus AH, Frank CW, Fayer MD
Journal of Physical Chemistry, 100(18), 7646, 1996 |
