| 1 |
Experimental determination of dependence of vertical growth rate on surface supersaturation in GaAs(001) microchannel epitaxy and growth optimization
Tomita M, Mizuno Y, Takakura H, Kambayashi D, Naritsuka S, Maruyama T
Journal of Crystal Growth, 440, 13, 2016 |
| 2 |
A new way to achieve dislocation-free heteroepitaxial growth by molecular beam epitaxy: vertical microchannel epitaxy
Matsunaga Y, Naritsuka S, Nishinaga T
Journal of Crystal Growth, 237, 1460, 2002 |
| 3 |
Interface-supersaturation estimated from the shape of steps on the surface of InP MCE by LPE
Naritsuka S, Nishinaga T
Journal of Crystal Growth, 222(1-2), 14, 2001 |
| 4 |
Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy
Bacchin G, Umeno A, Nishinaga T
Applied Surface Science, 159, 270, 2000 |
| 5 |
A new way to achieve both selective and lateral growth by molecular beam epitaxy: low angle incidence microchannel epitaxy
Bacchin G, Nishinaga T
Journal of Crystal Growth, 208(1-4), 1, 2000 |
| 6 |
Two-dimensional numerical calculation of solute diffusion in microchannel epitaxy of InP
Yan Z, Naritsuka S, Nishinaga T
Journal of Crystal Growth, 209(1), 1, 2000 |
| 7 |
Optimization of InP microchannel epitaxy on Si substrate achieved by addition of upper source
Naritsuka S, Nishinaga T, Tachikawa M, Mori H
Journal of Crystal Growth, 211(1-4), 395, 2000 |
| 8 |
Coalescence in microchannel epitaxy of InP
Yan Z, Hamaoka Y, Naritsuka S, Nishinaga T
Journal of Crystal Growth, 212(1-2), 1, 2000 |
| 9 |
AFM analysis of sidewall formation in low angle incidence microchannel epitaxy of GaAs
Umeno A, Bacchin G, Nishinaga T
Journal of Crystal Growth, 220(4), 355, 2000 |
