검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Effect of (100) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs Galiev GB, Vasilevskii IS, Klimov EA, Pushkarev SS, Klochkov AN, Maltsev PP, Presniakov MY, Trunkin IN, Vasiliev AL Journal of Crystal Growth, 392, 11, 2014 |
| 2 |
MBE-grown metamorphic lasers for applications at telecom wavelengths Ledentsov NN, Shchukin VA, Kettler T, Posilovic K, Bimberg D, Karachinsky LY, Gladyshev AY, Maximov MV, Novikov II, Shernyakov YM, Zhukov AE, Ustinov VM, Kovsh AR Journal of Crystal Growth, 301, 914, 2007 |
| 3 |
Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy Tangring I, Wang SM, Sadeghi M, Larsson A, Wang XD Journal of Crystal Growth, 301, 971, 2007 |
| 4 |
Optimization of 1.3 mu m metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy Tangring I, Wang SM, Sadeghi M, Gu QF, Larsson A Journal of Crystal Growth, 281(2-4), 220, 2005 |
| 5 |
InP/In0.53Ga0.47As/InP double heterojunction bipolar transistors on GaAs substrates using InP metamorphic buffer layer Kim YM, Dahlstrom M, Lee S, Rodwell MJW, Gossard AC Solid-State Electronics, 46(10), 1541, 2002 |