화학공학소재연구정보센터
검색결과 : 9건
No. Article
1 Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers
Kohen D, Nguyen XS, Made RI, Heidelberger C, Lee KH, Lee KEK, Fitzgerald EA
Journal of Crystal Growth, 478, 64, 2017
2 Optimization of MOCVD-diffused p-InP for planar avalanche photodiodes
Pitts OJ, Hisko M, Benyon W, Raymond S, SpringThorpe AJ
Journal of Crystal Growth, 393, 85, 2014
3 Multiwafer zinc diffusion in an OMVPE reactor
Pitts OJ, Benyon W, Goodchild D, SpringThorpe AJ
Journal of Crystal Growth, 352(1), 249, 2012
4 Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control
Creighton JR, Breiland WG, Koleske DD, Thaler G, Crawford MH
Journal of Crystal Growth, 310(6), 1062, 2008
5 Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD
Sumiyoshi K, Tsukihara M, Kataoka K, Kawamichi S, Okimoto T, Nishino K, Naoi Y, Sakai S
Journal of Crystal Growth, 298, 300, 2007
6 Structural studies of nano/micrometric semiconducting GaInP wires grown by MOCVD
Sacilotti M, Decobert J, Sik H, Post G, Dumas C, Viste P, Patriarche G
Journal of Crystal Growth, 272(1-4), 198, 2004
7 A quantum chemistry investigation of the gas phase and surface chemistry of the MOCVD of ZnSe
Moscatelli D, Cavallotti C, Masi M, Carra S
Journal of Crystal Growth, 248, 31, 2003
8 Optical in situ monitoring of MOVPE GaSb(100) film growth
Moller K, Kollonitsch Z, Giesen C, Heuken M, Willig F, Hannappel T
Journal of Crystal Growth, 248, 244, 2003
9 Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
Davis RF, Gehrke T, Linthicum KJ, Preble E, Rajagopal P, Ronning C, Zorman C, Mehregany M
Journal of Crystal Growth, 231(3), 335, 2001