| 1 |
Leakage current and rectification behavior of Au / TiO2 / GaN junctions with TiO2 interlayer oxygen deposition pressure
Lee Y, Kang SH, Lee JH, Dho J
Current Applied Physics, 20(1), 5, 2020 |
| 2 |
Resistive random-access memory with an a-Si/SiNx double-layer
Kwon HT, Lee WJ, Choi HS, Wee D, Park YJ, Kim B, Kim MH, Kim S, Park BG, Kim Y
Solid-State Electronics, 158, 64, 2019 |
| 3 |
Comparison of memory effect with voltage or current charging pulse bias in MIS structures based on codoped Si-NCs embedded in SiO2 or HfOx
Mazurak A, Mroczynski R
Solid-State Electronics, 159, 157, 2019 |
| 4 |
Influence of metal magnetic state and metal-insulator-semiconductor structure composition on magnetoimpedance effect caused by interface states
Smolyakov DA, Tarasov AS, Yakovlev IA, Masyugin AN, Volochaev MN, Bondarev IA, Kosyrev NN, Volkov NV
Thin Solid Films, 671, 18, 2019 |
| 5 |
Investigation of metal-insulator-semiconductor diode with alpha-Ga2O3 insulating layer by liquid phase deposition
Hsieh YS, Li CY, Lin CM, Wang NF, Li JV, Houng MP
Thin Solid Films, 685, 414, 2019 |
| 6 |
Electrical and structural characteristics of sputtered c-oriented AlN thin films on Si (100) and Si (110) substrates
Pandey A, Kaushik J, Dutta S, Kapoor AK, Kaur D
Thin Solid Films, 666, 143, 2018 |
| 7 |
Electrical and frequency-dependent properties of Au/Sm2O3/n-GaN MIS junction with a high-k rare-earth Sm2O3 as interlayer
Manjunath V, Reddy VR, Reddy PRS, Janardhanam V, Choi CJ
Current Applied Physics, 17(7), 980, 2017 |
| 8 |
Hexagonal thallium nitride in (TlX)(2n+1)H2n+4 [X = N, P, As; n=1-5] cluster series: A promising building motif for future smart nanomaterials
Shah EV, Roy DR
Materials Chemistry and Physics, 200, 368, 2017 |
| 9 |
Atomic layer deposition of tantalum oxide thin films using the precursor tert-butylimido-tris-ethylmethylamido-tantalum and water: Process characteristics and film properties
Henke T, Knaut M, Geidel M, Winkler F, Albert M, Bartha JW
Thin Solid Films, 627, 94, 2017 |
| 10 |
Effects of high-k zirconium oxide (ZrO2) interlayer on the electrical and transport properties of Au/n-type InP Schottky diode
Balaram N, Reddy MSP, Reddy VR, Park C
Thin Solid Films, 619, 231, 2016 |
