검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Integration of MOSFETs with SiGe dots as stressor material Nanver LK, Jovanovic V, Biasotto C, Moers J, Grutzmacher D, Zhang JJ, Hrauda N, Stoffel M, Pezzoli F, Schmidt OG, Miglio L, Kosina H, Marzegalli A, Vastola G, Mussler G, Stangl J, Bauer G, van der Cingel J, Bonera E Solid-State Electronics, 60(1), 75, 2011 |
| 2 |
Achieving low-V-T Ni-FUSICMOS via lanthanide incorporation in the gate stack Veloso A, Yu HY, Lauwers A, Chang SZ, Adelmann C, Onsia B, Demand M, Brus S, Vrancken C, Singanamalla R, Lehnen P, Kittl J, Kauerauf T, Vos R, O'Sullivan BJ, Van Elshocht S, Mitsuhashi R, Whittemore G, Yin KM, Niwa M, Hoffmann T, Absil P, Jurczak M, Biesemans S Solid-State Electronics, 52(9), 1303, 2008 |
| 3 |
Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-kappa dielectrics Srinivasan P, Simoen E, Singanamalla R, Yu HY, Claeys C, Misra D Solid-State Electronics, 50(6), 992, 2006 |
| 4 |
Emerging silicon-on-nothing (SON) devices technology Monfray S, Skotnicki T, Fenouillet-Beranger C, Carriere N, Chanemougame D, Morand Y, Descombes S, Talbot A, Dutartre D, Jenny C, Mazoyer P, Palla R, Leverd F, Le Friec Y, Pantel R, Borel S, Louis D, Buffet N Solid-State Electronics, 48(6), 887, 2004 |
| 5 |
Requirements for ultra-thin-film devices and new materials for the CMOS roadmap Fenouillet-Beranger C, Skotnicki T, Monfray S, Carriere N, Boeuf F Solid-State Electronics, 48(6), 961, 2004 |