화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates
Predan F, Ohlmann J, Mrabet S, Dimroth F, Lackner D
Journal of Crystal Growth, 496, 36, 2018
2 Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors
Celik-Butler Z, Mahmud MI, Hao P, Hou F, Amey BL, Pendharkar S
Solid-State Electronics, 111, 141, 2015
3 Optical and Charge Transport Properties of an Ambipolar Quinoidal Oligothiophene Derivative
Ribierre JC, Takaishi K, Mager L, Fujihara T, Muto T, Uchiyama M, Aoyama T
Molecular Crystals and Liquid Crystals, 566, 2, 2012
4 Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon
Hahn G, Geiger P, Sontag D, Fath P, Bucher E
Solar Energy Materials and Solar Cells, 74(1-4), 57, 2002
5 Donor densities and donor energy levels in 3C-SiC determined by a new method based on Hall-effect measurements
Matsuura H, Masuda Y, Chen Y, Nishino S
Materials Science Forum, 353-356, 495, 2001