검색결과 : 5건
No. | Article |
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1 |
Hall characterization of epitaxial GaSb and AlGaAsSb layers using p-n junctions on GaSb substrates Predan F, Ohlmann J, Mrabet S, Dimroth F, Lackner D Journal of Crystal Growth, 496, 36, 2018 |
2 |
Determination of active oxide trap density and 1/f noise mechanism in RESURF LDMOS transistors Celik-Butler Z, Mahmud MI, Hao P, Hou F, Amey BL, Pendharkar S Solid-State Electronics, 111, 141, 2015 |
3 |
Optical and Charge Transport Properties of an Ambipolar Quinoidal Oligothiophene Derivative Ribierre JC, Takaishi K, Mager L, Fujihara T, Muto T, Uchiyama M, Aoyama T Molecular Crystals and Liquid Crystals, 566, 2, 2012 |
4 |
Influence of hydrogen passivation on majority and minority charge carrier mobilities in ribbon silicon Hahn G, Geiger P, Sontag D, Fath P, Bucher E Solar Energy Materials and Solar Cells, 74(1-4), 57, 2002 |
5 |
Donor densities and donor energy levels in 3C-SiC determined by a new method based on Hall-effect measurements Matsuura H, Masuda Y, Chen Y, Nishino S Materials Science Forum, 353-356, 495, 2001 |