| 1 |
Time-dependent behavior of melt flow in the industrial scale silicon Czochralski growth with a transverse magnetic field
Yokoyama R, Nakamura T, Sugimura W, Ono T, Fujiwara T, Kakimoto K
Journal of Crystal Growth, 519, 77, 2019 |
| 2 |
Physical modelling of Czochralski crystal growth in horizontal magnetic field
Grants I, Pal J, Gerbeth G
Journal of Crystal Growth, 470, 58, 2017 |
| 3 |
Melt Flow before Crystal Seeding in Cz Si Growth with Transversal MF
Iizuka M, Mukaiyama Y, Demina SE, Kalaev VV
Journal of Crystal Growth, 468, 510, 2017 |
| 4 |
Fully three dimensional numerical analysis of industrial scale silicon Czochralski growth with a transverse magnetic field
Yokoyama R, Nakamura T, Fujiwara T, Hamaogi K, Takatani K
Journal of Crystal Growth, 468, 905, 2017 |
| 5 |
Scale up aspects of directional solidification and Czochralski silicon growth processes in traveling magnetic fields
Dropka N, Ervik T, Czupalla M, Kiessling FM
Journal of Crystal Growth, 451, 95, 2016 |
| 6 |
Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field
Chen X, Zhan JM, Li YS, Cen XR
Journal of Crystal Growth, 389, 60, 2014 |
| 7 |
Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field
Chen JC, Guo PC, Chang CH, Teng YY, Hsu C, Wang HM, Liu CC
Journal of Crystal Growth, 401, 888, 2014 |
| 8 |
Numerical simulation of Cz crystal growth in rotating magnetic field with crystal and crucible rotations
Zhou XM, Huang HL
Journal of Crystal Growth, 340(1), 166, 2012 |
| 9 |
Rayleigh-Benard instability of Czochralski configuration in a transverse magnetic field
Grants I, Gerbeth G
Journal of Crystal Growth, 358, 43, 2012 |
| 10 |
Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growth
Collet Y, Magotte O, Van den Bogaert N, Rolinsky R, Loix F, Jacot M, Regnier V, Marchal JM, Dupret F
Journal of Crystal Growth, 360, 18, 2012 |
