| 1 |
Structure and luminescence properties of Zn3V2O8 yellow phosphor for white light emitting diodes
Qian TT, Fan B, Wang HL, Zhu SK
Chemical Physics Letters, 715, 34, 2019 |
| 2 |
Enhancement of the lifetime in organic light-emitting devices fabricated utilizing wide-bandgap-impurity-doped emitting layers
Choo DC, Bang HS, Kwack BC, Kim TW, Seo JH, Kim YK
Thin Solid Films, 516(11), 3610, 2008 |
| 3 |
Efficiency stabilization in deep-blue organic light-emitting devices with a double emitting layer acting as electron and hole trapping layers
Bang HS, Lee DU, Kim TW, Han SM, Seo JH, Kim YK
Thin Solid Films, 516(16), 5649, 2008 |
| 4 |
Efficiency enhancement mechanism of organic light-emitting devices with an Alq(3) emitting layer containing a DPVBi wide bandgap doping agent
Bang HS, Choo DC, Kim TW, Kim JH, Seo JH, Kim YK
Molecular Crystals and Liquid Crystals, 459, 65, 2006 |
| 5 |
Luminescent mechanisms of ZnS : Cu : Cl and ZnS : Cu : Al phosphors
Chen YY, Duh JG, Chiou BS, Peng CG
Thin Solid Films, 392(1), 50, 2001 |
| 6 |
Solvent effects on the O-2(a(1)Delta(g))-O-2(X-3 Sigma(-)(g)) radiative transition : Comments regarding charge-transfer interactions
Poulsen TD, Ogilby PR, Mikkelsen KV
Journal of Physical Chemistry A, 102(48), 9829, 1998 |
| 7 |
Electrochemical methoxylation of an HF-etched porous silicon surface
Gole JL, Dixon DA
Journal of Physical Chemistry B, 102(10), 1768, 1998 |
| 8 |
On the correlation of aqueous and nonaqueous in situ and ex situ photoluminescent emissions from porous silicon - Evidence for surface-bound emitters
Gole JL, Dudel FP, Seals L, Reiger M, Kohl P, Bottomley LA
Journal of the Electrochemical Society, 145(9), 3284, 1998 |
| 9 |
On the electroluminescence and photoluminescence of porous silicon layers submitted to electrooxidation
Moreno JD, Guerrero-Lemus R, Martinez-Duart JM, Marcos ML, Gonzalez-Velasco J
Journal of Electroanalytical Chemistry, 437(1-2), 135, 1997 |
| 10 |
Suggested Correlation Between the Visible Photoluminescence and the Fourier-Transform Infrared-Spectrum of a Porous Silicon Surface
Gole JL, Dixon DA
Journal of Physical Chemistry B, 101(41), 8098, 1997 |
