화학공학소재연구정보센터
검색결과 : 4건
No. Article
1 ECR plasma in growth of cubic GaN by low pressure MOCVD
Gu B, Xu Y, Qin FW, Wang SS, Sui Y, Wang ZG
Plasma Chemistry and Plasma Processing, 22(1), 159, 2002
2 Growth of InNAs by low-pressure metalorganic chemical vapor deposition employing microwave-cracked nitrogen and in situ generated arsine radicals
Naoi H, Shaw DM, Naoi Y, Collins GJ, Sakai S
Journal of Crystal Growth, 222(3), 511, 2001
3 Heteroepitaxial growth of InAs by low-pressure metalorganic chemical vapor deposition employing in situ generated arsine radicals
Naoi H, Shaw DM, Collins GJ, Sakai S
Journal of Crystal Growth, 219(4), 481, 2000
4 Photoelectrochemical and corrosion properties of Fe2O3-TiO2 artificial passivation films
Kim H, Hara N, Sugimoto K
Journal of the Electrochemical Society, 146(3), 955, 1999