1 |
Nonlinear model-based control of the Czochralski process I: Motivation, modeling and feedback controller design Winkler J, Neubert M, Rudolph J Journal of Crystal Growth, 312(7), 1005, 2010 |
2 |
Nonlinear model-based control of the Czochralski process II: Reconstruction of crystal radius and growth rate from the weighing signal Winkler J, Neubert M, Rudolph J Journal of Crystal Growth, 312(7), 1019, 2010 |
3 |
Modeling of convective interactions and crystallization front shape in GaAs/LEC growth process Faiez R, Asadian M Journal of Crystal Growth, 311(3), 688, 2009 |
4 |
A new hybrid method for the global modeling of convection in CZ crystal growth configurations Fainberg J, Vizman D, Friedrich J, Mueller G Journal of Crystal Growth, 303(1), 124, 2007 |
5 |
Liquid-encapsulated Czochralski growth of Ga1-xInxAs single crystals with uniform compositions He J, Kou S Journal of Crystal Growth, 308(1), 10, 2007 |
6 |
LEC- and VGF-growth of SIGaAs single crystals - recent developments and current issues Jurisch M, Borner F, Bunger T, Eichler S, Flade T, Kretzer U, Kohler A, Stenzenberger J, Weinert B Journal of Crystal Growth, 275(1-2), 283, 2005 |
7 |
Axisymmetric and 3D calculations of melt flow during VCz growth Bansch E, Davis D, Langmach H, Miller W, Rehse U, Reinhardt G, Uhle M Journal of Crystal Growth, 266(1-3), 60, 2004 |
8 |
Three-dimensional modeling of melt flow and interface shape in the industrial liquid-encapsulated Czochralski growth of GaAs Vizman D, Eichler S, Friedrich J, Muller G Journal of Crystal Growth, 266(1-3), 396, 2004 |
9 |
Growth of GaAS crystals from Ga-rich melts by the VCz method without liquid encapsulation Kiessling FM, Rudolph P, Neubert M, Juda U, Naumann M, Ulrici W Journal of Crystal Growth, 269(2-4), 218, 2004 |
10 |
A combined carbon and oxygen segregation model for the LEC growth of SIGaAs Eichler S, Seidl A, Borner F, Kretzer U, Weinert B Journal of Crystal Growth, 247(1-2), 69, 2003 |