| 1 |
Investigation of consequent process-induced stress for N-type metal oxide semiconductor field effect transistor with a sunken shallow trench isolation pattern
Lee CC, Liu CH, Deng RH, Hsu HW, Chiang KN
Thin Solid Films, 557, 323, 2014 |
| 2 |
Nanoscale CMOSFET performance improvement and reliability study for local strain techniques
Huang HL, Chen JK, Houng MP
Solid-State Electronics, 79, 31, 2013 |
| 3 |
Phenomena of n-type metal-oxide-semiconductor-field-effect-transistors with contact etch stop layer stressor for different channel lengths
Hsu HW, Lin KC, Lee CC, Twu MJ, Huang HS, Chen SY, Peng MR, Teng HH, Liu CH
Thin Solid Films, 544, 120, 2013 |
| 4 |
High gate voltage drain current leveling off and its low-frequency noise in 65 nm fully-depleted strained and non-strained SOI nMOSFETs
LukyanchikovA N, Garbar N, Kudina V, Smolanka A, Lokshin M, Simoen E, Claeys C
Solid-State Electronics, 52(5), 801, 2008 |
| 5 |
Impact strain engineering on gate stack quality and reliability
Claeys C, Simoen E, Put S, Giusi G, Crupi F
Solid-State Electronics, 52(8), 1115, 2008 |
