| 1 |
Kink effect in ultrathin FDSOI MOSFETs
Park HJ, Bawedin M, Choi HG, Cristoloveanu S
Solid-State Electronics, 143, 33, 2018 |
| 2 |
Bottom-gate poly-Si thin-film transistors by nickel silicide seed-induced lateral crystallization with self-aligned lightly doped layer
Lee SK, Seok KH, Chae HJ, Lee YH, Han JS, Jo HA, Joo SK
Solid-State Electronics, 129, 6, 2017 |
| 3 |
A novel thin-film transistor with step gate-overlapped lightly doped drain and raised source/drain design
Chien FT, Chen JL, Chen CM, Chen CW, Cheng CH, Chiu HC
Solid-State Electronics, 137, 10, 2017 |
| 4 |
Enhanced DC model for GaN HEMT transistors with built-in thermal and trapping effects
Birafane A, Aflaki P, Kouki AB, Ghannouchi FM
Solid-State Electronics, 76, 77, 2012 |
| 5 |
Capacitance-voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs
Tang Z, Wie CR
Solid-State Electronics, 54(3), 259, 2010 |
| 6 |
Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
Lukyanchikova N, Garbar N, Kudina V, Smolanka A, Claeys C, Simoen E
Solid-State Electronics, 53(6), 613, 2009 |
| 7 |
A physical model of floating body effects in polysilicon thin film transistors
Wu WJ, Yao RH, Chen T, Chen RS, Deng WL, Zheng XR
Solid-State Electronics, 52(6), 930, 2008 |
| 8 |
Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
Guo W, Cretu B, Routoure JM, Carin R, Simoen E, Claeys C
Solid-State Electronics, 51(9), 1180, 2007 |
| 9 |
Asymmetric fingered polysilicon p-channel thin film transistor structure for kink effect suppression
Bonfighetti A, Cuscuna M, Rapisarda M, Pecora A, Mariucci L, Fortunato G, Caligiore C, Fontana E, Leonardi S, Trarnontana F
Thin Solid Films, 515(19), 7433, 2007 |
| 10 |
Electrical characteristics of single-silicon TFT structure with symmetric dual-gate for kink-effect suppression
Sung MY, Lee DY, Ryu JW, Kang EG
Solid-State Electronics, 50(5), 795, 2006 |
