검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Demonstration of the first SiC power integrated circuit Sheng K, Zhang YX, Su M, Zhao JH, Li XQ, Alexandrov P, Fursin L Solid-State Electronics, 52(10), 1636, 2008 |
| 2 |
An improved junction capacitance model for junction field-effect transistors Ding H, Liou JJ, Cirba CR, Green K Solid-State Electronics, 50(7-8), 1395, 2006 |
| 3 |
Effective edge termination design in SiCVJFET Bhatnagar P, Horsfall AB, Wright NG, O'Neill AG, Vassilevski KV, Johnson CM Materials Science Forum, 483, 877, 2005 |
| 4 |
Optimisation of a 4H-SiC enhancement mode power JFET for high temperature operation Bhatnagar P, Horsfall AB, Wright NG, Johnson CM, Vassilevski KV, O'Neill AG Solid-State Electronics, 49(3), 453, 2005 |
| 5 |
1,530V, 17.5 m Omega cm(2) normally-off 4H-SiC VJFET design, fabrication and characterization Fursin L, Li X, Zhao JH Materials Science Forum, 457-460, 1157, 2004 |
| 6 |
4,340V, 40 m Omega cm(2) normally-off 4H-SiC VJFET Zhao JH, Fursin L, Alexandrov P, Li X, Weiner M Materials Science Forum, 457-460, 1161, 2004 |