검색결과 : 5건
| No. | Article |
|---|---|
| 1 |
Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements Tomaszewski D, Gluszko G, Lukasiak L, Kucharski K, Malesinska J Solid-State Electronics, 128, 92, 2017 |
| 2 |
Use of solar cells for measuring temperature of solar cell blanket in spacecrafts Krishna HA, Misra NK, Suresh MS Solar Energy Materials and Solar Cells, 102, 184, 2012 |
| 3 |
An improved junction capacitance model for junction field-effect transistors Ding H, Liou JJ, Cirba CR, Green K Solid-State Electronics, 50(7-8), 1395, 2006 |
| 4 |
An elevated source/drain-on-insulator structure to maximize the intrinsic performance of extremely scaled MOSFETs Zhang ZK, Zhang SD, Feng CG, Chan MS Solid-State Electronics, 47(10), 1829, 2003 |
| 5 |
An analytical model for space-charge region capacitance based on practical doping profiles under any bias conditions Ma PX, Linder M, Sanden M, Zhang SL, Ostling M, Chang MCF Solid-State Electronics, 45(1), 159, 2001 |