| 1 |
The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology
Tsai YC, Gong J, Chan WC, Wu SY, Lien C
Solid-State Electronics, 132, 80, 2017 |
| 2 |
Slurry-Induced Pad Wear Rate in Chemical Mechanical Planarization
Meled A, Sampurno Y, Zhuang Y, Philipossiana A
Electrochemical and Solid State Letters, 13(3), H52, 2010 |
| 3 |
Precision laser micromachining of trenches in GaN on sapphire
Mak GY, Lam EY, Choi HW
Journal of Vacuum Science & Technology B, 28(2), 380, 2010 |
| 4 |
Shallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology
Hu CY, Chen JF, Chen SC, Chang SJ, Wang SM
Journal of Vacuum Science & Technology B, 28(2), 391, 2010 |
| 5 |
The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches
Luo GL, Huang SC, Ko CH, Wann CH, Chung CT, Han ZY, Cheng CC, Chang CY, Lin HY, Chien CH
Journal of the Electrochemical Society, 156(9), H703, 2009 |
| 6 |
Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. I. Feature scale modeling
Hoang J, Hsu CC, Chang JP
Journal of Vacuum Science & Technology B, 26(6), 1911, 2008 |
| 7 |
Feature profile evolution during shallow trench isolation etch in chlorine-based plasmas. II. Coupling reactor and feature scale models
Hsu CC, Hoang J, Le V, Chang JP
Journal of Vacuum Science & Technology B, 26(6), 1919, 2008 |
| 8 |
T-shaped shallow trench isolation with unfilled floating void
Irrera F, Puzzilli G, Ricci L, Russo F, Stirpe F
Solid-State Electronics, 52(8), 1188, 2008 |
| 9 |
The use of non-isobaric pre-hydrolysis for the isolation of organic compounds from wood and bark
Kuznetsov BN, Efremov AA, Levdanskii VA, Kuznetsova SA, Polezhayeva NI, Shilkina TA, Krotova IV
Bioresource Technology, 58(2), 181, 1996 |
