화학공학소재연구정보센터
검색결과 : 6건
No. Article
1 An intrinsic amorphous silicon oxide and amorphous silicon stack passivation layer for crystalline silicon heterojunction solar cells
Krajangsang T, Inthisang S, Sritharathikhun J, Hongsingthong A, Limmanee A, Kittisontirak S, Chinnavornrungsee P, Phatthanakun R, Sriprapha K
Thin Solid Films, 628, 107, 2017
2 Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation
Meddeb H, Bearda T, Payo MR, Abdelwahab I, Abdulraheem Y, Ezzaouia H, Gordon I, Szlufcik J, Poortmans J
Applied Surface Science, 328, 140, 2015
3 Control of micro void fraction and optical band gap in intrinsic amorphous silicon thin films (VHF-PECVD) for thin film solar cell application
Shin C, Park J, Jung J, Bong S, Kim S, Lee YJ, Yi J
Materials Research Bulletin, 60, 895, 2014
4 Optimization of intrinsic hydrogenated amorphous silicon deposited by very high-frequency plasma-enhanced chemical vapor deposition using the relationship between Urbach energy and silane depletion fraction for solar cell application
Shin C, Iftiquar SM, Park J, Kim Y, Baek S, Jang J, Kim M, Jung J, Lee Y, Kim S, Yi J
Thin Solid Films, 547, 256, 2013
5 Annealing effect on surface passivation of a-Si:H/c-Si interface in terms of crystalline volume fraction
Yang HJ, Ji KS, Choi J, Lee HM
Current Applied Physics, 10(3), S375, 2010
6 Batch processing method to deposit a-Si : H films by PECVD
Raniero L, Aguas H, Pereira L, Fortunato E, Ferreira I, Martins R
Materials Science Forum, 455-456, 104, 2004