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An intrinsic amorphous silicon oxide and amorphous silicon stack passivation layer for crystalline silicon heterojunction solar cells Krajangsang T, Inthisang S, Sritharathikhun J, Hongsingthong A, Limmanee A, Kittisontirak S, Chinnavornrungsee P, Phatthanakun R, Sriprapha K Thin Solid Films, 628, 107, 2017 |
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Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation Meddeb H, Bearda T, Payo MR, Abdelwahab I, Abdulraheem Y, Ezzaouia H, Gordon I, Szlufcik J, Poortmans J Applied Surface Science, 328, 140, 2015 |
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Control of micro void fraction and optical band gap in intrinsic amorphous silicon thin films (VHF-PECVD) for thin film solar cell application Shin C, Park J, Jung J, Bong S, Kim S, Lee YJ, Yi J Materials Research Bulletin, 60, 895, 2014 |
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Optimization of intrinsic hydrogenated amorphous silicon deposited by very high-frequency plasma-enhanced chemical vapor deposition using the relationship between Urbach energy and silane depletion fraction for solar cell application Shin C, Iftiquar SM, Park J, Kim Y, Baek S, Jang J, Kim M, Jung J, Lee Y, Kim S, Yi J Thin Solid Films, 547, 256, 2013 |
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Annealing effect on surface passivation of a-Si:H/c-Si interface in terms of crystalline volume fraction Yang HJ, Ji KS, Choi J, Lee HM Current Applied Physics, 10(3), S375, 2010 |
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Batch processing method to deposit a-Si : H films by PECVD Raniero L, Aguas H, Pereira L, Fortunato E, Ferreira I, Martins R Materials Science Forum, 455-456, 104, 2004 |