| 1 |
Comparative study of oxidizing ambient infused with varying nitrogen flow rates for fabrication of ternary nitridedAlZrObasedMOScapacitor
Quah HJ, Hassan Z, Lim WF
International Journal of Energy Research, 45(3), 3838, 2021 |
| 2 |
Atomic-layer deposition of crystalline BeO on SiC
Lee SM, Jang Y, Jung J, Yum JH, Larsen ES, Bielawski CW, Wang WJ, Ryou JH, Kim HS, Cha HY, Oh J
Applied Surface Science, 469, 634, 2019 |
| 3 |
Variation of poly-Si grain structures under thermal annealing and its effect on the performance of TiN/Al2O3/Si3N4/SiO2/poly-Si capacitors
Hong SB, Park JH, Lee TH, Lim JH, Shin C, Park YW, Kim TG
Applied Surface Science, 477, 104, 2019 |
| 4 |
Identification of a suitable passivation route for high-k/SiGe interface based on ozone oxidation
Ma XL, Zhou LX, Xiang JJ, Yang H, Wang XL, Li YL, Zhang J, Zhao C, Yin HX, Wang WW, Ye TC
Applied Surface Science, 493, 478, 2019 |
| 5 |
Tunneling field effect transistors (TFETs) with 3D fin-shaped channel structure and their electrical characteristics
Lim D, Han H, Choi C
Solid-State Electronics, 154, 1, 2019 |
| 6 |
The influence of grain boundary interface traps on electrical characteristics of top select gate transistor in 3D NAND flash memory
Zou XQ, Jin L, Yan L, Zhang Y, Ai D, Zhao CL, Xu F, Li CL, Huo ZL
Solid-State Electronics, 153, 67, 2019 |
| 7 |
Improved interface and electrical properties of atomic layer deposited Al2O3/4H-SiC
Suvanam SS, Usman M, Martin D, Yazdi MG, Linnarsson M, Tempez A, Gotelid M, Hallen A
Applied Surface Science, 433, 108, 2018 |
| 8 |
Electrical and optical characterization of SiOxNy and SiO2 dielectric layers and rear surface passivation by using SiO2/SiOxNy stack layers with screen printed local Al-BSF for c-Si solar cells
Balaji N, Nguyen HTT, Park C, Ju M, Raja J, Chatterjee S, Jeyakumar R, Yi J
Current Applied Physics, 18(1), 107, 2018 |
| 9 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018 |
| 10 |
Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition
Lee WC, Cho CJ, Park SI, Jun DH, Song JD, Hwang CS, Kim SK
Current Applied Physics, 18(8), 919, 2018 |
