검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Effect of Organosilane Underlayers on the Effectiveness of NiB Barrier Layers in ULSI Metallization Yoshino M, Aramaki H, Matsuda I, Okinaka Y, Osaka T Electrochemical and Solid State Letters, 12(4), D19, 2009 |
| 2 |
Failure Mechanism of 5 nm Thick Ta-Si-C Barrier Layers Against Cu Penetration at 750-800 degrees C Fang JS, Chiu CF, Lin JH, Lin TY, Chin TS Journal of the Electrochemical Society, 156(2), H147, 2009 |
| 3 |
Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2 Waechtler T, Oswald S, Roth N, Jakob A, Lang H, Ecke R, Schulz SE, Gessner T, Moskvinova A, Schulze S, Hietschold M Journal of the Electrochemical Society, 156(6), H453, 2009 |
| 4 |
Mechanistic Analysis of the "Bottom-Up" Fill in Copper Interconnect Metallization Akolkar R, Landau U Journal of the Electrochemical Society, 156(9), D351, 2009 |