화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 High-resistivity GaN buffer templates and their optimization for GaN-based HFETs
Hubbard SM, Zhao G, Pavlidis D, Sutton W, Cho E
Journal of Crystal Growth, 284(3-4), 297, 2005
2 Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate
Chen J, Zhang SM, Zhang BS, Zhu JJ, Feng G, Shen XM, Wang YT, Yang H, Zheng WC
Journal of Crystal Growth, 254(3-4), 348, 2003
3 Influences of reactor pressure of GaN buffer layers on morphological evolution of GaN grown by MOCVD
Chen J, Zhang SM, Zhang BS, Zhu JJ, Shen XM, Feng G, Liu JP, Wang YT, Yang H, Zheng WC
Journal of Crystal Growth, 256(3-4), 248, 2003