검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Characterization of the low temperature dopant activation behavior at NiSi/silicon interface formed by implant into silicide method Chang KM, Lin JH, Sun CY Applied Surface Science, 254(19), 6151, 2008 |
| 2 |
Characterization of the low temperature activated N+/P junction formed by implant into silicide method Chang KM, Lin JH, Yang CH Applied Surface Science, 254(19), 6155, 2008 |