검색결과 : 2건
| No. | Article |
|---|---|
| 1 |
Characteristics of 6H-SiC bipolar JTE diodes realized by sublimation epitaxy and Al implantation Strel'chuk AM, Lebedev AA, Davydov DV, Savkina NS, Kuznetsov AN, Valakh MY, Kiselev VS, Romanyuk BN, Raynaud C, Chante JP, Locatelli ML Materials Science Forum, 457-460, 1133, 2004 |
| 2 |
NO gas detection at high temperature using thin-Pt 4H-SiC and 6H-SiC schottky diodes Khan SA, de Vasconcelos EA, Uchida H, Katsube T Materials Science Forum, 433-4, 961, 2002 |