검색결과 : 6건
| No. | Article |
|---|---|
| 1 |
Low temperature high-rate growth of crystalline Ge films on quartz and crystalline Si substrates from VHF inductively-coupled plasma of GeH(4) Sakata T, Makihara K, Deki H, Higashi S, Miyazaki S Thin Solid Films, 517(1), 216, 2008 |
| 2 |
High rate growth of device-grade microcrystalline silicon films at 8 nm/s Niikura C, Kondo M, Matsuda A Solar Energy Materials and Solar Cells, 90(18-19), 3223, 2006 |
| 3 |
Influence of C/Si ratio on the 4H-SiC (0001) epitaxial growth and a keynote for high-rate growth Ishida Y, Takahashi T, Kojima K, Okumura H, Arai K, Yoshida S Materials Science Forum, 457-460, 213, 2004 |
| 4 |
A novel approach for the growth of Rc-Si at a high rate over 3 nm/s Tanda M, Kondo M, Matsuda A Thin Solid Films, 427(1-2), 33, 2003 |
| 5 |
Growth of device grade mu c-Si film at over 50 A/s using PECVD Suzuki S, Kondo M, Matsuda A Solar Energy Materials and Solar Cells, 74(1-4), 489, 2002 |
| 6 |
Numerical investigation of natural and forced solutal convection above the surface of a growing crystal Brailovskaya VA, Zilberberg VV, Feoktistova LV Journal of Crystal Growth, 210(4), 767, 2000 |