| 1 |
Interface properties of MBE grown epitaxial oxides on GaAs
Contreras-Guerrero R, Edirisooriya M, Noriega OC, Droopad R
Journal of Crystal Growth, 378, 238, 2013 |
| 2 |
Interface roughness of double buffer layer of GaN film grown on Si(1 1 1) substrate using GIXR analysis
Yamamoto Y, Yamabe N, Ohachi T
Journal of Crystal Growth, 318(1), 474, 2011 |
| 3 |
The Application of Energy Dispersive Diffraction for Nondestructive Analysis of Large Material Depths and for Residual Stress Determination
Kampfe B, Luczak F, Urban M
Particle & Particle Systems Characterization, 26(3), 125, 2009 |
| 4 |
Structural defects in SiC crystals investigated by high energy x-ray diffraction
Weisser M, Seitz C, Wellmann PJ, Hock R, Magerl A
Materials Science Forum, 457-460, 339, 2004 |
| 5 |
Stabilization against initial oxidation using surface segregation of sulfur on Fe(100)
Fujita D, Ohgi T, Homma T
Applied Surface Science, 200(1-4), 55, 2002 |
| 6 |
Carbon monoxide oxidation on nanostructured CuOx/CeO2 composite particles characterized by HREM, XPS, XAS, and high-energy diffraction
Skarman B, Grandjean D, Benfield RE, Hinz A, Andersson A, Wallenberg LR
Journal of Catalysis, 211(1), 119, 2002 |
| 7 |
Dependence of the reflection high-energy electron diffraction oscillation shape on the molecular migration time and the oscillation period
Lee HG, Kang TW, Kim TW
Journal of Crystal Growth, 240(3-4), 363, 2002 |
