화학공학소재연구정보센터
검색결과 : 49건
No. Article
1 DC Current-crowding estimation for SiGe:C heterojunction bipolar transistors
Ramirez-Garcia E, Garduno-Nolasco E, Rodriguez-Mendez LM, Diaz-Albarran LM, Valdez-Perez D, Galaz-Larios MC, Aniel F, Zerounian N, Enciso-Aguilar MA
Solid-State Electronics, 153, 1, 2019
2 Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325 GHz
Deng M, Quemerais T, Bouvot S, Gloria D, Chevalier P, Lepilliet S, Danneville F, Dambrine G
Solid-State Electronics, 129, 150, 2017
3 Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors
Liu M, Zhang YM, Lu HL, Zhang YM, Zhang JC, Ren XT
Solid-State Electronics, 109, 52, 2015
4 An improved model for InP/InGaAs double heterojunction bipolar transistors
Shi YX, Jin Z, Su YB, Cao YX, Wang Y
Solid-State Electronics, 81, 163, 2013
5 80 ns/45 GHz Pulsed measurement system for DC and RF characterization of high speed microwave devices
Weiss M, Fregonese S, Santorelli M, Sahoo AK, Maneux C, Zimmer T
Solid-State Electronics, 84, 74, 2013
6 Temperature-Dependent Characteristics of a GaN/InGaN/ZnO Heterojunction Bipolar Transistor
Hsueh KP, Pan CT, Li CT, Lin HC, Hsin YM, Chyi JI
Journal of the Electrochemical Society, 157(3), H381, 2010
7 Improvement of Ohmic contacts to In0.65Ga0.35Sb using Mo refractory metal and surface preparation for 6.3 A degrees heterojunction bipolar transistors
Mairiaux E, Desplanque L, Wallart X, Zaknoune M
Journal of Vacuum Science & Technology B, 28(1), 17, 2010
8 Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors
Chen TP, Lee CJ, Cheng SY, Lour WS, Tsai JH, Guo DF, Ku GW, Liu WC
Electrochemical and Solid State Letters, 12(2), H41, 2009
9 Molecular beam epitaxy in a high-volume GaAs fab
Rogers TJ
Journal of Crystal Growth, 311(7), 1671, 2009
10 Proton irradiation effects on Sb-based heterojunction bipolar transistors
Lo CF, Kim HY, Kim J, Chen SH, Wang SY, Chyi JI, Chou BY, Chen KH, Wang YL, Chang CY, Pearton SJ, Kravchenko LI, Jang S, Ren F
Journal of Vacuum Science & Technology B, 27(6), L33, 2009