검색결과 : 4건
| No. | Article |
|---|---|
| 1 |
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress Lee YM, Wu YD, Bae C, Hong JG, Lucovsky G Solid-State Electronics, 47(1), 71, 2003 |
| 2 |
Evolution from soft to hard breakdown in thin gate oxides: effect of oxide thickness, capacitor area and stress current Cacciato A, Evseev S, Valk H Solid-State Electronics, 45(8), 1339, 2001 |
| 3 |
Experimental evaluation of device degradation subject to oxide soft breakdown Zhang J, Yuan JS, Ma Y, Chen Y, Oates AS Solid-State Electronics, 45(9), 1521, 2001 |
| 4 |
Enhancement in soft breakdown occurrence of ultra-thin gate oxides caused by photon effect in rapid thermal post-oxidation annealing Huang CH, Hwu JG Solid-State Electronics, 44(8), 1405, 2000 |