화학공학소재연구정보센터
검색결과 : 5건
No. Article
1 Atomic layer deposition of HfO2: Growth initiation study on metallic underlayers
Platt CL, Li N, Li KJ, Klein TM
Thin Solid Films, 518(15), 4081, 2010
2 Optical characterization of HfO2 by spectroscopic ellipsometry: Dispersion models and direct data inversion
Sancho-Parramon J, Modreanu M, Bosch S, Stchakovsky M
Thin Solid Films, 516(22), 7990, 2008
3 Interface engineering for Ge metal-oxide-semiconductor devices
Dimoulas A, Brunco DP, Ferrari S, Seo JW, Panayiotatos Y, Sotiropoulos A, Conard T, Caymax M, Spiga S, Fanciulli M, Dieker C, Evangelou EK, Galata S, Houssa M, Heyns MM
Thin Solid Films, 515(16), 6337, 2007
4 Application of XPS time-dependent measurement to the analysis of charge trapping phenomena in HfAlOx films
Hirose K, Yamawaki M, Torii K, Kawahara T, Kawashiri S, Hattori T
Applied Surface Science, 237(1-4), 411, 2004
5 Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films
Aarik J, Aidla A, Kiisler AA, Uustare T, Sammelselg V
Thin Solid Films, 340(1-2), 110, 1999