검색결과 : 3건
| No. | Article |
|---|---|
| 1 |
Ultra-low resistivity Al+ implanted 4H-SiC obtained by microwave annealing and a protective graphite cap Sundaresan SG, Mahadik NA, Qadri SB, Schreifels JA, Tian YL, Zhang QC, Gomar-Nadal E, Rao MV Solid-State Electronics, 52(1), 140, 2008 |
| 2 |
Technological aspects of ion implantation in SiC device processes Negoro Y, Kimoto T, Matsunami H Materials Science Forum, 483, 599, 2005 |
| 3 |
Flat surface after high-temperature annealing for phosphorus-ion implanted 4H-SiC (0001) using graphite cap Negoro Y, Katsumoto K, Kimoto T, Matsunami H Materials Science Forum, 457-460, 933, 2004 |