| 1 |
TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H-SiC MOSFETs using nitric oxide post-deposition annealing
Moon JH, Kang IH, Kim HW, Seok O, Bahng W, Ha MW
Current Applied Physics, 20(12), 1386, 2020 |
| 2 |
Al2O3/Si0.7Ge0.3(001) & HfO2/Si(0.7)Ge0.3(001) interface trap state reduction via in-situ N-2/H-2 RF downstream plasma passivation
Breeden M, Wolf S, Ueda S, Fang ZW, Chang CY, Tang KC, McIntyre P, Kummel AC
Applied Surface Science, 478, 1065, 2019 |
| 3 |
Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer
Jia YF, Lv HL, Tang XY, Han C, Song QW, Zhang YM, Zhang YM, Dimitrijev S, Han JS
Journal of Crystal Growth, 507, 98, 2019 |
| 4 |
Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor
Lee S, Kim YS, Kang HJ, Kim H, Ha MW, Kim HJ
Solid-State Electronics, 139, 115, 2018 |
| 5 |
Electron mobility in ultra-thin InGaAs channels: Impact of surface orientation and different gate oxide materials
Krivec S, Poljak M, Suligoj T
Solid-State Electronics, 115, 109, 2016 |
| 6 |
Engineering organic/inorganic alumina-based films as dielectrics for red organic light emitting transistors
Soldano C, Generali G, Cianci E, Tallarida G, Fanciulli M, Muccini M
Thin Solid Films, 616, 408, 2016 |
| 7 |
Ge incorporated epitaxy of (110) rutile TiO2 on (100) Ge single crystal at low temperature by pulsed laser deposition
Nagata T, Kobashi K, Yamashita Y, Yoshikawa H, Paulsamy C, Suzuki Y, Nabatame T, Ogura A, Chikyow T
Thin Solid Films, 591, 105, 2015 |
| 8 |
Atomic layer deposition of Y2O3 and yttrium-doped HfO2 using a newly synthesized Y(iPrCp)(2)(N-iPr-amd) precursor for a high permittivity gate dielectric
Lee JS, Kim WH, Oh IK, Kim MK, Lee G, Lee CW, Park J, Lansalot-Matras C, Noh W, Kim H
Applied Surface Science, 297, 16, 2014 |
| 9 |
SOI dual-gate ISFET with variable oxide capacitance and channel thickness
Park JK, Jang HJ, Park JT, Cho WJ
Solid-State Electronics, 97, 2, 2014 |
| 10 |
Off-state avalanche-breakdown-induced on-resistance degradation in SGO-NLDMOS
Zhang SF, Han Y, Ding KB, Hu JX, Zhang B, Zhang W, Wu HT
Solid-State Electronics, 81, 27, 2013 |
