| 1 |
Normally-off AlGaN/GaN MIS-HEMT with low gate leakage current using a hydrofluoric acid pre-treatment
Kurt G, Gulseren ME, Ghobadi TGU, Ural S, Kayal OA, Ozturk M, Butun B, Kabak M, Ozbay E
Solid-State Electronics, 158, 22, 2019 |
| 2 |
Performance optimization of lateral AlGaN/GaN HEMTs with cap gate on 150-mm silicon substrate
Sun H, Liu MH, Liu P, Lin XN, Cui XL, Chen JG, Chen DM
Solid-State Electronics, 130, 28, 2017 |
| 3 |
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Ahmed N, Dutta AK
Solid-State Electronics, 132, 64, 2017 |
| 4 |
Accurate modeling of gate tunneling currents in Metal-Insulator-Semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3 and post-metallization annealing
Molina-Reyes J, Uribe-Vargas H, Torres-Torres R, Mani-Gonzalez PG, Herrera-Gomez A
Thin Solid Films, 638, 48, 2017 |
| 5 |
A compact model of the reverse gate-leakage current in GaN-based HEMTs
Ma XY, Huang JK, Fang JL, Deng WL
Solid-State Electronics, 126, 10, 2016 |
| 6 |
Improved high-k stacks with chemical oxide interfacial layer by DPN/PNA treatment
Li S, Chen YT, Chang SJ
Current Applied Physics, 15(3), 180, 2015 |
| 7 |
Improved modeling on the RF behavior of InAs/AlSb HEMTs
Guan H, Lv HL, Zhang YM, Zhang YM
Solid-State Electronics, 114, 155, 2015 |
| 8 |
Physics based modeling of gate leakage current due to traps in AlGaN/GaN HFETs
Goswami A, Trew RJ, Bilbro GL
Solid-State Electronics, 80, 23, 2013 |
| 9 |
Improved microcrystalline silicon and gate insulator interface with a pad/buffer structure
Lin CW, Tsai YC, Chen YL
Thin Solid Films, 529, 398, 2013 |
| 10 |
Extraction of trap energy and location from random telegraph noise in gate leakage current (I-g RTN) of metal-oxide semiconductor field effect transistor (MOSFET)
Cho HJ, Lee S, Park BG, Shin H
Solid-State Electronics, 54(4), 362, 2010 |
