| 1 |
A modified capacitance model of RF MEMS shunt switch incorporating fringing field effects of perforated beam
Guha K, Kumar M, Agarwal S, Baishya S
Solid-State Electronics, 114, 35, 2015 |
| 2 |
Solvent-Tolerant Patterning of Poly(3-hexylthiophene) Film by Subtractive Photolithography
Kim WY, Lee WY, Jeon GJ, Shim HB, Kang IK, Kim JH, Park GT, Kwon JH, Lee HC, Bae JH
Molecular Crystals and Liquid Crystals, 599(1), 36, 2014 |
| 3 |
Investigation of gate length and fringing field effects for program and erase efficiency in gate-all-around SONOS memory cells
Kim MS, Choi SJ, Moon DI, Duarte JP, Kim S, Choi YK
Solid-State Electronics, 79, 7, 2013 |
| 4 |
A compact model of fringing field induced parasitic capacitance for deep sub-micrometer MOSFETs
Liu X, Jin X, Lee JH
Solid-State Electronics, 53(9), 1041, 2009 |
| 5 |
Fringing fields in sub-0.1 mu m fully depleted SOI MOSFETs: optimization of the device architecture
Ernst T, Tinella C, Raynaud C, Cristoloveanu S
Solid-State Electronics, 46(3), 373, 2002 |
| 6 |
Evaluation of the Dispersive Nature of Meshes Used for the Spherical-Aberration Correction of Electrostatic Lenses
Kato M, Sekine T
Journal of Vacuum Science & Technology A, 14(2), 453, 1996 |
