| 1 |
Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Palade C, Lepadatu AM, Slav A, Lazanu S, Teodorescu VS, Stoica T, Ciurea ML
Applied Surface Science, 428, 698, 2018 |
| 2 |
Effects of blocking oxide layer types on the performance of nonvolatile floating gate memory containing AgInSbTe-SiO2 nanocomposite thin films
Chiang KC, Hsieh TE
Thin Solid Films, 621, 63, 2017 |
| 3 |
Memory characteristics and tunneling mechanism of Ag nanocrystal embedded HfAlOx films on Si83Ge17/Si substrate
Qiu XY, Zhou GD, Li J, Chen Y, Wang XH, Dai JY
Thin Solid Films, 562, 674, 2014 |
| 4 |
Size dependent charge storage characteristics of MBE grown Ge nanocrystals on surface oxidized Si
Aluguri R, Das S, Singha RK, Ray SK
Current Applied Physics, 13(1), 12, 2013 |
| 5 |
Nonvolatile floating gate memory characteristics of Sb2Te-SiO2 nanocomposite thin films
Yang CH, Chiang KC, Hsieh TE
Thin Solid Films, 529, 263, 2013 |
| 6 |
Control of electronic charged states of Si-based quantum dots for floating gate application
Miyazaki S, Makihara K, Ikeda M
Thin Solid Films, 517(1), 41, 2008 |
| 7 |
Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material
Lee HR, Choi S, Cho K, Kim S
Thin Solid Films, 516(2-4), 412, 2007 |
| 8 |
Effects of forming gas annealing on the memory characteristics of Ge nanocrystals embedded in LaAiO(3) high-k dielectrics for flash memory device application
Lu XB, Lee PF, Dai JY
Thin Solid Films, 513(1-2), 182, 2006 |
| 9 |
Single-electron phenomena in ultra-scaled floating-gate devices and their impact on electrical characteristics
Deleruyelle D, Molas G, DeSalvo B, Gely M, Lafond D
Solid-State Electronics, 49(11), 1728, 2005 |
