화학공학소재연구정보센터
검색결과 : 3건
No. Article
1 Reduction of stacking faults in fast epitaxial growth of 4H-SiC and its impacts on high-voltage Schottky diodes
Fujiwara H, Kimoto T, Tojo T, Matsunami H
Materials Science Forum, 483, 151, 2005
2 Fast epitaxial growth of thick 4H-SiC with specular surface by chimney-type vertical hot-wall chemical vapor deposition
Fujiwara H, Danno K, Kimoto T, Tojo T, Matsunami H
Materials Science Forum, 457-460, 205, 2004
3 Fast epitaxial growth of high-quality 4H-SiC by vertical hot-wall CVD
Fujihira K, Kimoto T, Matsunami H
Materials Science Forum, 433-4, 161, 2002