| 1 |
Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
Kim JH, Kim CK
Korean Journal of Chemical Engineering, 37(2), 374, 2020 |
| 2 |
Modulation of Ag modification on NO2 adsorption and sensing response characteristics of Si nanowire: A DFT study
Qin YX, Zhao LM, Jiang YQ
Applied Surface Science, 467, 37, 2019 |
| 3 |
Fabrication and enhanced H2O2-sensing properties of the uniform porous FTO glasses with tunable pore sizes and densities
Zhang JH, Han JG, Shi ZY, Ju YF, Zhang ZS, Gu M
Applied Surface Science, 465, 357, 2019 |
| 4 |
Laser heat-mode lithography characteristics and mechanism of ZnS-SiO2 thin films
Wei T, Wei JS, Zhang K, Liu B, Bai Z, Wang Y, Cui Y, Wu YQ, Zhang L
Materials Chemistry and Physics, 212, 426, 2018 |
| 5 |
On the Etching Mechanisms of SiC Thin Films in CF4/CH2F2/N-2/Ar Inductively Coupled Plasma
Lee J, Efremov A, Kim K, Kwon KH
Plasma Chemistry and Plasma Processing, 37(2), 489, 2017 |
| 6 |
Etching Characteristics and Mechanisms of TiO2 Thin Films in CF4 + Ar, Cl-2 + Ar and HBr plus Ar Inductively Coupled Plasmas
Lee J, Efremov A, Lee BJ, Kwon KH
Plasma Chemistry and Plasma Processing, 36(6), 1571, 2016 |
| 7 |
Investigation of H-2/CH4 mixed gas plasma post-etching process for ZnO: B front contacts grown by LP-MOCVD method in silicon-based thin-film solar cells
Wang L, Zhang XD, Zhao Y, Yamada T, Naito Y
Applied Surface Science, 316, 508, 2014 |
| 8 |
On the LPCVD-Formed SiO2 Etching Mechanism in CF4/Ar/O-2 Inductively Coupled Plasmas: Effects of Gas Mixing Ratios and Gas Pressure
Son J, Efremov A, Chun I, Yeom GY, Kwon KH
Plasma Chemistry and Plasma Processing, 34(2), 239, 2014 |
| 9 |
Dry etching characteristics of Mo and Al2O3 films in O-2/Cl-2/Ar inductively coupled plasmas
Kwon KH, Efremov A, Yun SJ, Chun I, Kim K
Thin Solid Films, 552, 105, 2014 |
| 10 |
Etching Characteristics and Mechanisms of Mo and Al2O3 Thin Films in O-2/Cl-2/Ar Inductively Coupled Plasmas: Effect of Gas Mixing Ratios
Kang S, Efremov A, Yun SJ, Son J, Kwon KH
Plasma Chemistry and Plasma Processing, 33(2), 527, 2013 |
