| 1 |
Etching Kinetics and Surface Conditions for KNbxOy Thin Films with Fluorine- and Chlorine-Based Plasma Chemistries
Lim N, Efremov A, Hwang HG, Nahm S, Kwon KH
Plasma Chemistry and Plasma Processing, 40(2), 625, 2020 |
| 2 |
Etching Kinetics and Mechanisms of SiC Thin Films in F-, Cl- and Br-Based Plasma Chemistries
Lee BJ, Efremov A, Lee J, Kwon KH
Plasma Chemistry and Plasma Processing, 39(1), 325, 2019 |
| 3 |
Kinetics and mechanisms for ion-assisted etching of InP thin films in HBr + Cl-2 + Ar inductively coupled plasma with various HBr/Cl-2 mixing ratios
Kim C, Efremov A, Lee J, Han IK, Kim YH, Kwon KH
Thin Solid Films, 660, 590, 2018 |
| 4 |
Uniform trench arrays with controllable tilted profiles using metal-assisted chemical etching
Chen CY, Liu YR, Tseng JC, Hsu PY
Applied Surface Science, 333, 152, 2015 |
| 5 |
The influence of oxidizing agents on etching and passivation of silicon in KOH solution
Xia XH, Kelly JJ
Electrochimica Acta, 45(28), 4645, 2000 |
| 6 |
Studies on etching kinetics and assessment of defects in flux grown ErAlO3 crystals
Bamzai KK, Dhar PR, Kotru PN, Wanklyn BM
Materials Chemistry and Physics, 62(3), 214, 2000 |
| 7 |
Surface structural and etching studies on high-temperature solution grown GdAlO3 crystals
Sharma KK, Kotru PN, Wanklyn BM
Materials Chemistry and Physics, 66(1), 22, 2000 |
